? 2005 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1200 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c6a i dm t c = 25 c, pulse width limited by t jm 24 a i ar t c = 25 c6a e ar t c = 25 c25mj e as t c = 25 c 500 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 ad 6 g to-247 ad (ixth) (tab) ds99335(02/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 1200 v v gs(th) v ds = v gs , i d =2.5 ma 3.0 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c50 a v gs = 0 v t j = 125 c 1500 a r ds(on) v gs = 10 v, i d = 0.5 i d25 2.6 ? pulse test, t 300 s, duty cycle d 2 % high voltage hiperfet power mosfet n-channel enhancement mode avalanche rated features z international standard packages z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density preliminary data sheet v dss = 1200 v i d (cont) = 6 a r ds(on) = 2.6 ? ? ? ? ? t rr 300 ns ixfh 6n120 g = gate, d = drain, s = source, tab = drain
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixfh 6n120 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 3 5 s c iss 1950 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 175 pf c rss 60 pf t d(on) 28 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 33 ns t d(off) r g = 4.7 ? (external) 42 ns t f 18 ns q g(on) 56 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 13 nc q gd 25 nc r thjc 0.42 k/w r thck (to-247) 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 6 a i sm repetitive 24 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 6 a, di/dt 100 a/ s 300 ns q rm 0.6 uc i rm 3.0 a dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3
? 2005 ixys all rights reserved ixfh 6n120 fig. 2. extended output characteristics @ 25 deg. c 0 2 4 6 8 10 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 1 0v 9v 8v 7v 5v 6v fig. 3. output characteristics @ 125 deg. c 0 1 2 3 4 5 6 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 1 0v 9v 8v 7v 6v 5v fig. 1. output characteristics @ 25 deg. c 0 1 2 3 4 5 6 0246810121416 v ds - volts i d - amperes v gs = 1 0v 9v 8v 7v 5v 6v fig. 4. r ds(on) normalized to i d25 value vs. junction temperature 0.4 0.7 1 1. 3 1. 6 1. 9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degr ees centigr ade r ds(on) - normalize d i d = 6a i d = 3a v gs = 1 0v fig. 6. drain current vs. case t emperature 0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to i d25 value vs. i d 0.7 1 1. 3 1. 6 1. 9 2.2 2.5 2.8 0 1.5 34.567.5 9 i d - amperes r ds(on) - normalize d t j = 1 25oc t j = 25oc v gs = 1 0v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixfh 6n120 fig. 11. capacitance 10 10 0 10 0 0 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - p f c iss c oss c rss f = 1 m hz fig. 10. gate charge 0 2 4 6 8 10 0 10 2030405060 q g - nanocoulombs v gs - volts v ds = 600v i d = 3a i g = 1 0ma fig. 7. input admittance 0 1 2 3 4 5 6 3.544.555.566.5 v gs - volts i d - amperes t j = -40oc 25oc 1 25oc fig. 12. maximum t ransient t hermal resistance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r (th)jc - (oc/w) fig. 8. transconductance 0 2 4 6 8 10 12 0 1.5 3 4.5 6 7.5 9 i d - amperes g fs - siemens t j = -40oc 25oc 1 25oc fig. 9. source current vs. source-to-drain voltage 0 4 8 12 16 20 0.4 0.5 0.6 0.7 0.8 0.9 v sd - volts i s - amperes t j = 1 25oc t j = 25oc
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